We offer customized cryogenic amplifiers e.g. for STM/AFM applications, FT-ICR ion traps and QPC measurements. Our cryogenic low noise amplifiers are developed with focus on small shot noise signals.

The HFC 50 D/E represents an ultra low noise 2-channel FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of the predecessor version HFC 50 B/C. Version HFC 50 E equals version HFC 50 D, but offers an additional (uncalibrated) silicon temperature diode for temperature monitoring.

The device has been developed in close collaboration with a  University group for low temperature shot noise measurements on quantum point contacts beyond the 1/f noise kink in the noise spectra.

• substantially improved voltage and current noise floor: 0.30nV/√Hz, 17fA/√Hz @ 1MHz, T = 4K
• outstanding low 1/f noise
• improved channel matching

• Ultra Low Input Noise (typ. 0.25nV/√Hz @ 10MHz)
• Frequency Range 160kHz to 50MHz
• Input Impedance approx. 10MOhm
• Dual Channel Version with Adjustable Channel matching
• Output Impedance 50 Ohm or 75 Ohm
• Wide Temperature Range T = 300K down to T = 4.2K
• Very Small Size

The KC 05 du module comprises 2 highly sensitive voltage preamplifier channels, and is intended for lowtemperature, low-noise applications. The circuit can be used directly inside a cryogenic vacuum setup. GaAs (Gallium-Arsenide)-FET technology allows for operation in strong magnetic fields up to several Tesla, as they are present in NMR, FT-ICR or solid state research applications.

• Ultra Low Input Noise (typ. 0.4nV/√Hz @ 1MHz, T=4K)
• Frequency Range 0.75kHz to 5MHz
• 2-Channel Device
• Input Impedance approx. 25MOhm
• Amplifaction Factor typ. 25 V/V

• Very low noise version:
  The device version V.09 (Version 2009) features a smaller case size, lowered voltage- and current noise and a further increased input impedance than the older versions. The usable temperature range covers the whole span from room temperature (300K) to liquid Helium temperature (4.2K). 
  For more details please refer to the data sheet:  pdf, 6.80 MB 
  
  
• Super low noise version:
  The device version V.2014 (year 2014) supersedes the former version KC 05 V.09 (Version 2009) and features significantly improved voltage- and current noise, lower input capacitance and a further increased amplification factor. The usable temperature range covers the whole span from room temperature (300K) to liquid Helium temperature (4.2K). 
  For more details please refer to the data sheet:  pdf, 3.20 MB

The new BUF 0.12 device is a CMOS-based precision buffer amplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). The BUF 0.12 covers a frequency range from 0Hz to 0.12MHz (in terms of max. 1% voltage deviation), features a very high input impedance and has an input voltage noise in the order of 5nV/√Hz. The device is based on highly-doped Silicon CMOS technology, which allows for operation over a very wide temperature range from room temperature to liquid Helium temperature, provided the device is located in a vacuum cryostat.

• Precision Voltage Buffer DC 0Hz to 120kHz
• Wide Temperature Range T = 300K down to T = 4.2K
• Selectable Input Impedance

• Analog Room Temperature Interface for Cryogenic Amplifiers
• Creates and Monitors Required Supply Lines
• Microcontroller-Assisted Analysis of Possible Malfunctions
• Dual-Channel or Differential-to-Single Ended Signal Conversion