SiC wafer
Цена: руб.
SiC Substrate and Epitaxy:
SiC substate(epi ready), N type and Semi-insulating,polytype 4H and 6H in different quality grades, Micropipe Density (MPD):Free, <5/cm2, <10/cm2, <30/cm2,<100/cm2
SiC Epitaxy:Wafer to wafer thickness uniformity: 2% ,Wafer to wafer doping uniformity: 4%
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PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. -
We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect -
PAM-XIAMEN is able to offer the following SiC reclaim wafer services. -
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs device
